CN
|

SiC MOSFET

SiC MOSFET

SiC MOSFET has the characteristics of high voltage, low on resistance, high speed, small parasitic capacitance, high operating junction temperature, fast recovery diode, and Kelvin connection drive.

Application Form
Scheme Design
  • 750V
  • 1200V
  • 1500V
  • 1700V
  • 1800V
  • 10mΩ
  • 12mΩ
  • 25mΩ
  • 40mΩ
  • 13mΩ
  • 21mΩ
  • 23mΩ
  • 35mΩ
  • 15mΩ
  • 37mΩ
  • 20mΩ
  • 1200mΩ
  • 7mΩ
  • 14mΩ
  • 32mΩ
  • 75mΩ
  • 160mΩ
  • 172A
  • 160A
  • 92A
  • 64A
  • 69A
  • 155A
  • 112A
  • 97A
  • 107A
  • 65A
  • 75A
  • 144A
  • 72A
  • 110A
  • 66A
  • 0.52A
  • 253A
  • 152A
  • 87A
  • 76A
  • 73A
  • 44A
  • 39A
  • 20A
  • 21A
  • Industrial
  • Automotive
Product SKU Data Sheet Blocking Voltage Rds_on at 25℃ Current Rating Vgs_op Tj(max) Package Generation Qualification Status
SG2M010075HJnew 750V 10mΩ 172A +18V 175℃ TO-247-4L-A G2 Industrial Sample
SG2M012075HJ 750V 12mΩ 160A +18V 175℃ TO-247-4L-A G2 Industrial Sample
SG2M025075LJ 750V 25mΩ 92A +18V 175℃ TO-247-4L-C G2 Industrial Sample
SG2M040075LJ 750V 40mΩ 64A +18V 175℃ TO-247-4L-C G2 Industrial Sample
SG2M040075JJ 750V 40mΩ 69A +18V 175℃ TO-263-7L-A G2 Industrial Sample
SG2M014120LJ 1200V 13mΩ 155A +18V 175℃ TO-247-4L-C G2 Industrial Sample
SG2M021120LH 1200V 21mΩ 112A +15V 175℃ TO-247-4L-C G2 Industrial Active
SG2M023120LJ 1200V 23mΩ 97A +18V 175℃ TO-247-4L-C G2 Industrial Active
SG2M023120J1J 1200V 23mΩ 107A +18V 175℃ TO-263-7L-B G2 Industrial Sample
SG2M040120HJ 1200V 35mΩ 65A +18V 175℃ TO-247-4L-A G2 Industrial Sample
SG2M040120LJ 1200V 35mΩ 65A +18V 175℃ TO-247-4L-C G2 Industrial Sample
SG2M040120JJ 1200V 35mΩ 75A +18V 175℃ TO-263-7L-A G2 Industrial Sample
SG2M015150HK 1500V 15mΩ 144A +18V 175℃ TO-247-4L-A G2 Industrial Sample
S2M040150HJ 1500V 37mΩ 72A +18V 175℃ TO-247-4L-A G2 Industrial Active
SG2M020170HJ 1700V 20mΩ 110A +18V 175℃ TO-247-4L-A G2 Industrial Sample
SG2M040170HJ 1700V 40mΩ 66A +18V 175℃ TO-247-4L-A G2 Industrial Sample
S2M12K180KJ 1800V 1200mΩ 0.52A +18V 175℃ TO-3PF-3L G2 Industrial Sample
S1M007120PD 1200V 7mΩ 253A +18V 175℃ TO-247plus-4L G1 Automotive Active
S1M014120H 1200V 14mΩ 152A +18V 175℃ TO-247-4L-A G1 Automotive Active
S1M032120H 1200V 32mΩ 87A +15~18V 175℃ TO-247-4L-A G1 Automotive Active
S1M040120H 1200V 40mΩ 76A +15~18V 175℃ TO-247-4L-A G1 Automotive Active
S1M040120L 1200V 40mΩ 76A +15~18V 175℃ TO-247-4L-C G1 Automotive Active
S1M040120D 1200V 40mΩ 73A +15~18V 175℃ TO-247-3L G1 Automotive Active
S1M075120H2 1200V 75mΩ 44A +15~18V 175℃ TO-247-4L-A G1 Automotive Active
S1M075120J2 1200V 75mΩ 39A +15~18V 175℃ TO-263-7L-A G1 Automotive Active
S1M075120D2 1200V 75mΩ 44A +15~18V 175℃ TO-247-3L G1 Automotive Active
SG1M160120L 1200V 160mΩ 20A +15V 175℃ TO-247-4L-C G1 Industrial Active
SG1M160120J 1200V 160mΩ 21A +15V 175℃ TO-263-7L-A G1 Automotive Active
SG1M160120D 1200V 160mΩ 20A +15V 175℃ TO-247-3L G1 Industrial Active
Copyright © 2025 Qingchun Semiconductor (Ningbo) Co., Ltd. All Rights Reserved
technical support：一诺优品