QC Semiconductor

About SICHAIN

Qingchun Semiconductor has an internationally leading team for SiC device design and process research and development. The core of the team has been engaged in SiC semiconductor technology for more than 20 years ...

  • SiC JBS
  • SiC MOSFET
  • Power Module
  • Bare Die

SiC JBS

SiC Schottky diode

SiC JBS is an efficient, reliable, durable, and dependable silicon diode, characterized by high surge, low VF, high speed, small parasitic capacitance, zero reverse recovery, and high operating junction temperature.

SiC MOSFET

Metal oxide semiconductor field-effect transistor

SiC MOSFET has the characteristics of high voltage, low on resistance, high speed, small parasitic capacitance, high operating junction temperature, fast recovery diode, and Kelvin connection drive.

Power Module

Silicon carbide power module

Featuring industry-leading on resistance characteristics and excellent reliability level

Bare Die

Silicon carbide bare core

Integrated with advanced self-developed SiC MOSFET and SBD, more in line with customer needs

Leading the future of silicon carbide (SiC) chips

Qingchun Semiconductor has an internationally leading team for SiC device design and process research and development. The core of the team has been engaged in SiC semiconductor technology for more than 20 years, researching and industrializing multiple generations of SiC power devices, including SiC diodes and MOSFETs, and has passed industrial and automotive grade tests.

  • 500 W+

    Accumulated shipments

  • 0 %

    Product failure

  • 70 +

    Serve customers