Recently, Qingchun Semiconductor launched the 1200V/14m Ω SiC MOSFET product - S1M0141240H, which has passed tests by automotive companies and tier 1 manufacturers. S1M0141240H has industry-leading low on resistance, and its static conduction characteristics and dynamic switching characteristics have reached the international first-class level. It can be applied to new energy vehicle motor controllers, high-power charging modules, photovoltaic inverters, and high-power energy storage fields. The launch of S1M0141240H fills the product gap in this field in China.

The main static parameters of S1M014120H are compared with international first-class products (derived from various product specifications) as shown in the following table:

By comparison, S1M014120H can operate within a larger range of gate driving voltages to meet the development needs of different driving circuits. Its maximum allowable operating junction temperature is 175 ℃, further enhancing the current carrying capacity of the device and helping to achieve higher power density. Its static parameters have reached the international first-class level.

At the same time, Qingchun Semiconductor has closely cooperated with leading domestic power module suppliers. Based on the specific requirements of the electric drive system for new energy vehicles (1200V/800A), a detailed characterization has been conducted on the switching performance of multi chip parallel power modules manufactured using S1M0141240H and SiC chips of the same specifications from international mainstream manufacturers at room temperature and high temperature. The turn off and conduction characteristics of modules manufactured using S1M0141240H at room temperature and high temperature are shown in the following figure:

Compared with the test results of modules manufactured using international mainstream chips, the module using S1M0141240H exhibits smooth waveforms, prominent high-frequency oscillation damping effects, and low switching energy, making it more suitable for applications such as motor controllers and charging modules that require higher efficiency and electromagnetic compatibility. In terms of switch waveform characteristics and energy loss, the S1M0141240H launched by Pure Semiconductor has world-class dynamic performance.

Qingchun Semiconductor, with its strong technical strength, continuously achieves breakthroughs in the research and market application of SiC MOSFET products. In April, it mass-produced the first domestically produced 15V driven SiC MOSFET, and in August, it launched the 1200V/14m Ω SiC MOSFET with the lowest on resistance in China. Currently, MOSFET products of different specifications have been widely applied in the fields of photovoltaics, power supply, and OBC. The company not only always aims at the forefront of international technology, but also pays attention to product quality control. It has established a complete quality control system and reliability laboratory. The 1200V mass-produced SiC MOSFET series products have passed AEC-Q101 testing, and the reliability testing of newly developed products is proceeding smoothly.

Since the establishment of the "dual carbon" target in our country, the new energy industry has entered a stage of leapfrog development, which provides valuable historical opportunities for the explosion of the third-generation semiconductor industry represented by silicon carbide. China has the world's largest electric vehicle market, and due to the significant improvement in power density, energy efficiency, and range of new energy vehicles by silicon carbide power devices, it is expected that SiC MOSFETs will be widely used in new energy vehicle owners' drives in 2-3 years. The domestic SiC MOSFET chip with low on resistance that can match the performance and reliability of international mainstream products and is suitable for electric vehicle main drive will become an urgent demand in the industry, with huge market potential. Qingchun Semiconductor has made comprehensive preparations in terms of technology research and development, product mass production, quality control, and production capacity supply, and is committed to promoting the localization process of SiC MOSFET, supporting the rapid development of new energy vehicles in China, and helping the country achieve the grand goal of the "dual carbon" strategy.