Recently, Qingchun Semiconductor launched the third-generation silicon carbide (SiC) MOSFET technology platform, which features the first main drive chip (model: S3M008120BK) with a low on resistance of 8m Ω at room temperature. Through patented technology and process improvement, the platform has achieved a leading specific on resistance coefficient Rsp=2.1 m Ω. cm compared to similar international products, as shown in Figure 1, further achieving high current processing capability and smaller losses, helping new energy vehicle motor drivers further unleash the potential of SiC high power density and high energy conversion efficiency, and improve driving range.

Figure 1 Changes in Specific Resistance Rsp of Pure Semiconductor Generation 1, 2, and 3 Products

    The rated voltage of this product is 1.2 kV, the rated current exceeds 220A, and the typical threshold voltage at room temperature is 2.7~2.8V. Figure 2 shows the output characteristic curves of the chip at room temperature and high temperature, respectively, reflecting excellent on resistance temperature characteristics. Under equivalent chip area, the conduction loss is reduced by about 20% compared to the previous generation technology, enabling application design with higher efficiency, smaller packaging, and higher reliability. It is worth noting that, unlike traditional chip iteration techniques, this chip maintains excellent short-circuit withstand characteristics similar to the previous two generations while reducing on resistance.