Qingchun Semiconductor takes it as its responsibility to provide world-class silicon carbide (SiC) power devices, striving to meet the demand for high-performance and high reliability products in fields such as new energy vehicles and photovoltaics. Since its establishment, the company has continuously optimized the performance of SiC devices in all aspects through unique technologies with independent intellectual property rights, and is committed to creating a series of products that benchmark international leading levels. On September 29, 2022, our 1200V 75 m Ω SiC MOSFET successfully passed the domestic third-party reliability verification, obtained the full set of AEC-Q101 vehicle grade certification, and passed the high-voltage 960V H3TRB (HV-H3TRB) reliability assessment. To our knowledge, this is the first public report in China that SiC MOSFET products can pass both AEC-Q101 automotive certification and HV-H3TRB dual assessment.

AEC-Q101 is one of the most important international standards in the automotive industry, a universal technical specification for the international automotive industry, and one of the certifications that automotive electronics must obtain. For 1200V voltage resistant devices, their voltage resistance is usually 100V in the high voltage, high humidity, and high temperature reverse bias (HTRB) assessment standard, while in the HV-H3TRB assessment, the voltage resistance is increased to 960V, which poses extremely high challenges to the design, manufacturing, and packaging technology of the devices. The reliability verification of HV-H3TRB greatly represents the excellent tolerance and service life of power devices in extreme operating environments, and therefore it has gradually become a universal requirement for high reliability power devices by major mainstream automotive and photovoltaic energy storage manufacturers.

The passing of this vehicle specification reliability certification marks that our company's product quality has entered the international leading level, laying a solid foundation for the company's expansion in markets such as new energy vehicles and photovoltaics. It is another "milestone" event for our company after successfully mass producing SiC MOSFETs of different specifications (such as the leading 15V drive SiC MOSFET in China and the lowest on resistance 14 milliohm SiC MOSFET in China). Our company will take this opportunity to be down-to-earth, forge ahead, continuously improve product performance, and contribute our own strength to the development of energy conservation, emission reduction, and new energy in China.

On this day of universal celebration, Qingchun Semiconductor wishes our country prosperity and the people happiness and health!