En
|

SiC MOSFET-Bare Die

SiC MOSFET-Bare Die

集成了先进的自研SiC MOSFET和SBD，更加贴切客户需求

产品申请表
方案设计
  • 750V
  • 1200V
  • 1500V
  • 1700V
  • 1800V
  • 12mΩ
  • 25mΩ
  • 40mΩ
  • 14mΩ
  • 16mΩ
  • 23mΩ
  • 15mΩ
  • 37mΩ
  • 20mΩ
  • 1200mΩ
  • 32mΩ
  • 75mΩ
  • 160mΩ
  • 160A
  • 92A
  • 64A
  • 155A
  • 127A
  • 97A
  • 144A
  • 72A
  • 110A
  • 0.52A
  • 152A
  • 87A
  • 76A
  • 44A
  • 20A
  • Industrial
  • Automotive
Product SKU DataSheet Blocking Voltage Rds_on at 25℃ Current Rating Vgs_op Tjmax Generation Qualification Status
SG2M012075BJ 750V 12mΩ 160A +18V 175℃ G2 Industrial Sample
SG2M025075BJ 750V 25mΩ 92A +18V 175℃ G2 Industrial Sample
SG2M040075BJ 750V 40mΩ 64A +18V 175℃ G2 Industrial Sample
SG2M014120BJ 1200V 14mΩ 155A +18V 175℃ G2 Industrial Sample
SG2M014120B 1200V 14mΩ 155A +18V 175℃ G2 Industrial Sample
SG2M014120NK 1200V 14mΩ 155A +18V 175℃ G2 Industrial Sample
SG2M016120B 1200V 16mΩ 127A +18V 175℃ G2 Industrial Sample
SG2M023120BJ 1200V 23mΩ 97A +18V 175℃ G2 Industrial Active
SG2M015150BK 1500V 15mΩ 144A +18V 175℃ G2 Industrial Sample
S2M040150BJ 1500V 37mΩ 72A +18V 175℃ G2 Industrial Active
SG2M020170BJ 1700V 20mΩ 110A +18V 175℃ G2 Industrial Sample
S2M12K180BJ 1800V 1200mΩ 0.52A +18V 175℃ G2 Industrial Active
S1M014120B 1200V 14mΩ 152A +18V 175℃ G1 Automotive Active
S1M014120BP 1200V 14mΩ 152A +18V 175℃ G1 Automotive Active
S1M032120B 1200V 32mΩ 87A +15~18V 175℃ G1 Automotive Active
S1M040120B 1200V 40mΩ 76A +15~18V 175℃ G1 Automotive Active
S1M075120B2 1200V 75mΩ 44A +15~18V 175℃ G1 Automotive Active
SG1M160120B 1200V 160mΩ 20A +15V 175℃ G1 Automotive Active
Copyright © 2025 清纯半导体（宁波）有限公司 All Rights Reserved. 浙ICP备2022011316号-1
技术支持：一诺优品