Recently, the 2025 Shanghai Science and Technology Awards Conference was grandly held. The project "Key Technologies and Industrialization for Design and Manufacturing of Domestic Silicon Carbide (SiC) Power Devices for New Energy Vehicle Main Drives," jointly submitted by Semiconductors (Ningbo) Co., Ltd. ,  ‌GTA Semiconductor, and Fudan University, was awarded the Shanghai Science and Technology Progress Second Prize.

As a core participant in the project, SiChain Semiconductors (Ningbo) Co., Ltd. leverages its technical strengths in SiC device design, product validation, and application implementation to continuously deepen research and development of automotive-grade silicon carbide chips. By collaborating with upstream and downstream partners in the industrial chain, it builds an "industry-academia-research-application" innovation system, helping to break through overseas technological barriers and accelerate the autonomous and controllable process of core power devices for new energy vehicles.

This award is an authoritative recognition of the project's technological innovation value and industrialization achievements. In the future, SiChain Semiconductors (Ningbo) Co., Ltd. will continue to focus on silicon carbide technology innovation, iteratively develop high-performance SiC power device products, collaborate with industry chain partners to advance joint technological research, and contribute to the high-quality development of China's new energy vehicle and third-generation semiconductor industries