On June 11-12, the Low Voltage Electrical Appliances and Solid State Technology Innovation and Development Summit Forum was successfully held in Suzhou, focusing on the construction of new power systems, the landing of cutting-edge technologies such as solid-state transformers (SST) and solid-state circuit breakers, and the construction of industrial ecosystems. As a benchmark enterprise for silicon carbide power devices in China, Qingchun Semiconductor participated in the conference and had in-depth exchanges with industry experts and colleagues on the development trends, technical bottlenecks, and breakthrough directions of power technology. They shared the design ideas, application practices, and reliability research results of high-voltage SiC devices in equipment such as SST and solid-state circuit breakers. Previously, the company reached a deep strategic cooperation with the leading power equipment company Teruide, using silicon carbide core components as the fulcrum to improve the full chain layout of SST from chip research and development, solution customization to scenario scale application, and consolidate its core competitive position in the solid-state power technology field.

1、 Appearing at top industry forums, anchoring the core direction of SST technology development

    The theme of this forum is "New Orientation, New Technology, and New Ecology", closely related to the "15th Five Year Plan", industrial policies, power investment, energy transformation, and solid-state technology applications. It focuses on trillion level application scenarios such as solid-state transformers, high-frequency power conversion, AIDC data centers, and supercharging networks.

    Zhang Qingchun, Chairman of SiChain Semiconductors (Ningbo) Co., Ltd., stated that the expansion of AI computing power is driving the increase in AIDC single machine power. Power devices represented by SiC MOSFETs are the core components of solid-state transformers, solid-state circuit breakers, and intelligent low-voltage electrical appliances, and their performance directly determines the overall efficiency, power density, and cost of the machine. With the opportunity of industry exchange at the Low Voltage Electrical Appliances and Solid State Technology Innovation Summit, we have gained a clear understanding of industry technology trends. In the future, Qingchun Semiconductor will continue to focus on innovation in SiC core technology, deeply cultivate the SST track, empower the upgrading of solid-state power equipment with high-quality domestic silicon carbide devices, help China's low-voltage electrical appliances and solid-state power technology to be independently controllable, and serve the high-quality development of energy transformation and computing infrastructure

    At the forum, Xie Genhua, Senior Marketing and Sales Director of SiChain Semiconductors (Ningbo) Co., Ltd., and his team had in-depth exchanges with experts from universities, colleges, and low-voltage electrical and power equipment peers on the development and industrial application of SiC MOSFET technology. They shared the design architecture, process optimization results, and measured application data of self-developed SiC chips to address common industry challenges such as device reliability, loss optimization, modular integration, and long-term operational stability under SST high-frequency and high-voltage conditions. They comprehensively demonstrated the company's technological accumulation and layout ideas in the integration of high-voltage silicon carbide devices and solid-state power equipment, and helped the entire industry achieve technological synergy and upgrading.

    During the conference, attendees visited the strategic cooperation wafer fab of SiChain Semiconductors (Ningbo) Co., Ltd.. The fab is currently fully operational, and diodes and MOSFETs have passed automotive grade reliability verification. Multiple new devices and processes are being developed intensively at the fab, which is an important component of SiChain Semiconductors (Ningbo) Co. breakthrough in achieving new technologies from scratch and implementing the Fablite model.

2、 Joining hands with Teruide to achieve strategic cooperation and break through the closed loop of SST industrialization landing

    While consolidating the foundation of technological paths through forum discussions, SiChain Semiconductors (Ningbo) Co. and Teratek have reached a deep strategic cooperation, focusing on the joint research and development, technological iteration, and industrialization of SST solid-state transformers. Together, they will create a new generation of highly reliable, efficient, and low-carbon power supply solutions for AI data centers, intelligent computing clusters, and other scenarios, laying a solid foundation for the localization of computing power supply.

    In this cooperation, SiChain Semiconductors (Ningbo) Co. customized and developed high-voltage and high-frequency SiC MOSFET dedicated chips and power modules based on the operating characteristics of SST and computing islands, fully utilizing the low conduction loss, high switching frequency, excellent high temperature resistance and shock resistance of the devices, which can meet the high reliability and long-life mass production requirements of SST in scenarios such as computing power supply, power grid distribution, and energy storage converters, and connect the key links of the industry chain between the research and development of silicon carbide core devices and the integration of solid-state power equipment.

3、 Comprehensive layout of SST track, building a silicon carbide+solid-state power ecological map

    Based on the cutting-edge technology perspective of the forum and strategic cooperation with leading enterprises, SiChain Semiconductors (Ningbo) Co. has officially established a long-term development strategy in the SST field:

1. Deep cultivation of technology: Develop exclusive device solutions for different voltage levels and power ranges of medium and high voltage SST, and overcome the bottleneck of high-frequency oscillation, heat dissipation, and parallel current sharing technology for SiC devices used in SST;

2. Ecological synergy: Collaborate with upstream extension and substrate material manufacturers, downstream power equipment, power grid, and computing infrastructure enterprises, deeply participate in the synergy of the solid-state electrical appliance industry chain, and jointly promote the localization and substitution of SST;

3. Scenario expansion: With computing power data centers, high-voltage direct current distribution, new energy storage, and high-power supercharging as the core scenarios, relying on cooperation with leading equipment companies such as Teruide, we will promote the large-scale landing of SST equipped with domestically produced SiC devices, and assist in the green and low-carbon upgrading of the new power system.

    Facing the wave of energy revolution and expansion of computing infrastructure during the 15th Five Year Plan period, the SST market has ushered in an explosive growth window. SiChain Semiconductors (Ningbo) Co. sets its direction through technological research and industrial cooperation to promote implementation. With stable production capacity, mature processes, rigorous reliability, and continuous technological iteration, it continuously strengthens its core advantages in the SST field and drives the leapfrog development of the domestic solid-state power industry with third-generation semiconductor innovation.