From December 12th to December 14th, the 8th "Maker China" Small and Medium sized Enterprise Innovation and Entrepreneurship Competition, jointly hosted by the Ministry of Industry and Information Technology, the Ministry of Finance, and the Guangdong Provincial People's Government, was successfully held in Dongguan City. Qingchun Semiconductor (Ningbo) Co., Ltd.'s "Research and Industrialization of Automotive grade SiC Power Chips" project won the first prize in the enterprise group of the national finals.

The "Maker China" Small and Medium sized Enterprise Innovation and Entrepreneurship Competition is the most influential national innovation and entrepreneurship competition brand in China, aimed at enhancing the professional capabilities and levels of small and medium-sized enterprises, promoting their transformation, upgrading, and growth into specialized, refined, and innovative "little giant" enterprises, promoting collaborative innovation and development among large, medium, and small enterprises, and assisting in the construction of a strong manufacturing and networking country. Since the registration for this year's "Maker China" Small and Medium sized Enterprise Innovation and Entrepreneurship Competition was launched, it has attracted more than 37000 projects from various industries to participate. After multiple rounds of preliminary and semi-final rounds, 50 high-quality projects from all over the country have been selected by various provinces and cities to compete fiercely in the finals.

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Qingchun Semiconductor, with its leading technological advantages and outstanding performance, received unanimous praise from the judges and on-site guests, and successfully won the first prize in the enterprise group of the finals. Winning the first prize in the enterprise group of the finals this time is a full recognition and high affirmation of our company's technical capabilities, level of specialization, and development prospects.

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In terms of talent, we have attracted several industry veterans and PhDs to join us, further enhancing our management and research and development capabilities; In terms of products, the second-generation SiC MOSFET series has been launched; In terms of innovation, the second-generation MOSFET products have reached the international first-class level with a specific resistance of 2.8m Ω· cm ²; In terms of supply chain, strategic cooperation agreements have been signed with two leading domestic SiC device wafer fabs to further ensure the company's leapfrog development capacity; In terms of market promotion, we have achieved the introduction and volume increase of multiple leading new energy customers, and the verification of main drive chips for multiple new energy vehicles is progressing smoothly; In terms of sales, we have achieved a growth of more than three times and shipped over one million SiC MOSFETs.

The first prize in this national competition is a full recognition of the development of Qingchun Semiconductor in the past three years. Qingchun Semiconductor will stand at a new starting point, be more enterprising, and aspire to serve the national "dual carbon" strategy, achieve domestic substitution and technological leadership of silicon carbide (SiC) chips, strive to grow into an international first-class power semiconductor high-tech enterprise, and contribute to the development of the country's third-generation semiconductor strategic emerging industry.